? semiconductor components industries, llc, 2013 february, 2013 ? rev. 8 1 publication order number: bat54xv2t1/d bat54xv2t1g schottky barrier diodes these schottky barrier diodes are designed for high ? speed switching applications, circuit protection, and voltage clamping. extremely low forward voltage reduces conduction loss. miniature surface mount package is excellent for hand ? held and portable applications where space is limited. features ? extremely fast switching speed ? low forward voltage ? 0.35 v (typ) @ i f = 10 ma ? s prefix for automotive and other applications requiring unique site and control change requirements; aec ? q101 qualified and ppap capable ? these devices are pb ? free, halogen free/bfr free and are rohs compliant maximum ratings (t j = 125 c unless otherwise noted) rating symbol value unit reverse voltage v r 30 v thermal characteristics characteristic symbol max unit total device dissipation fr ? 5 board, (note 1) t a = 25 c derate above 25 c p d 200 1.57 mw mw/ c forward current (dc) i f 200 max ma non ? repetitive peak forward current, t p < 10 msec i fsm 600 ma repetitive peak forward current pulse wave = 1 sec, duty cycle = 66% i frm 300 ma thermal resistance, junction ? to ? ambient r ja 635 c/w junction and storage temperature t j , t stg ? 55 to 125 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. fr ? 4 minimum pad. 30 volt silicon hot ? carrier detector and switching diodes 1 cathode 2 anode http://onsemi.com sod ? 523 case 502 plastic 1 2 1 device package shipping ? ordering information marking diagram bat54xv2t1g sod ? 523 (pb ? free) 3000 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specifications brochure, brd8011/d. jv = device code m = date code* = pb ? free package (note: microdot may be in either location) *date code orientation may vary depending upon manufacturing location. jvm bat54xv2t5g sod ? 523 (pb ? free) 8000 / tape & reel SBAT54XV2T1G sod ? 523 (pb ? free) 3000 / tape & reel
bat54xv2t1g http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit reverse breakdown voltage (i r = 10 a) v (br)r 30 ? ? v total capacitance (v r = 1.0 v, f = 1.0 mhz) c t ? 7.6 10 pf reverse leakage (v r = 25 v) i r ? 0.5 2.0 a forward voltage (i f = 0.1 ma) v f ? 0.22 0.24 v forward voltage (i f = 1.0 ma) v f ? 0.29 0.32 v forward voltage (i f = 10 ma) v f ? 0.35 0.40 v forward voltage (i f = 30 ma) v f ? 0.41 0.5 v forward voltage (i f = 100 ma) v f ? 0.52 0.8 v reverse recovery time (i f = i r = 10 ma, i r(rec) = 1.0 ma) figure 1 t rr ? ? 5.0 ns notes: 1. a 2.0 k variable resistor adjusted for a forward current (i f ) of 10 ma. notes: 2. input pulse is adjusted so i r(peak) is equal to 10 ma. notes: 3. t p ? t rr +10 v 2 k 820 0.1 f dut v r 100 h 0.1 f 50 output pulse generator 50 input sampling oscilloscope t r t p t 10% 90% i f i r t rr t i r(rec) = 1 ma output pulse (i f = i r = 10 ma; measured at i r(rec) = 1 ma) i f input signal figure 1. recovery time equivalent test circuit
bat54xv2t1g http://onsemi.com 3 100 0.0 0.1 v f , forward voltage (volts) 0.2 0.3 0.4 0.5 10 1.0 0.1 85 c 10 0 v r , reverse voltage (volts) 1.0 0.1 0.01 5101520 25 14 0 v r , reverse voltage (volts) 12 4 2 0 51015 30 figure 2. forward voltage figure 3. leakage current figure 4. total capacitance ? 40 c 25 c t a = 150 c t a = 125 c t a = 85 c t a = 25 c 0.6 ? 55 c 150 c 125 c 100 1000 30 25 20 6 8 10 i r , reverse current ( a) i f , forward current (ma) c t , total capacitance (pf)
bat54xv2t1g http://onsemi.com 4 package dimensions sod ? 523 case 502 issue e notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. maximum lead thickness includes lead finish. minimum lead thickness is the minimum thickness of base material. 4. dimensions d and e do not include mold flash, pro- trusions, or gate burrs. e d ? x ? ? y ? b 2x m 0.08 x y a h c dim min nom max millimeters d 1.10 1.20 1.30 e 0.70 0.80 0.90 a 0.50 0.60 0.70 b 0.25 0.30 0.35 c 0.07 0.14 0.20 l 0.30 ref h 1.50 1.60 1.70 12 *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* e e recommended top view side view 2x bottom view l2 l 2x 2x 0.48 0.40 2x 1.80 dimension: millimeters package outline l2 0.15 0.20 0.25 on semiconductor and are registered trademarks of semiconductor co mponents industries, llc (scillc). scillc owns the rights to a numb er of patents, trademarks, copyrights, trade secrets, and other intellectual property. a list ing of scillc?s product/patent coverage may be accessed at ww w.onsemi.com/site/pdf/patent ? marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. all operating parame ters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or a uthorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in whic h the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or us e scillc products for any such unintended or unauthorized appli cation, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unin tended or unauthorized use, even if such claim alleges that scil lc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyrig ht laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 bat54xv2t1/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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